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| (R) SMBYW02-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF(max) Tj (max) 2A 200 V 0.85 V 150 C FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY LOW FORWARD AND REVERSE RECOVERY TIMES SMB (JEDEC DO-214AA) DESCRIPTION Single chip rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in SMB, this surface mount device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Non repetitive surge peak forward current Storage temperature range Maximum operating junction temperature Tl=100C = 0.5 tp=10ms sinusoidal Value 200 10 2 50 - 65 to + 150 150 Unit V A A A C C October 1999 - Ed: 4C 1/5 SMBYW02-200 THERMAL RESISTANCE Symbol Rth (j-l) Junction to leads Parameter Value 25 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol VF * Parameters Reverse Leakage Current Test Conditions Tj = 25C Tj = 100C IF = 6 A IF = 2 A VR = VRRM Min. Typ. Max. 1.25 Unit V 0.8 0.85 10 A mA IR ** Forward Voltage Drop Tj = 25C Tj = 100C 0.1 0.3 Pulse test : * tp = 380 s, < 2 % ** tp = 5 ms, < 2 % To evaluate the conductionlosses use the following equation : P = 0.7 x IF(AV) + 0.075 x IF2 (RMS) RECOVERY CHARACTERISTICS Symbol trr tfr Test Conditions Tj = 25C Tj = 25C IF = 1A dIF/dt = -50A/s VR = 30V Min. Typ. 26 30 Max. 35 Unit ns ns IF = 2A dIF/dt = -50A/s VFR = 1.1 x VF max IF = 2A dIF/dt = -50A/s VFP Tj = 25C 5 V 2/5 SMBYW02-200 Fig. 1: Low frequency power losses versus average current. P F(av)(W) =0.1 =0.2 =0.5 =1 Fig. 2: Peak current versus form factor. 2.5 2.0 1.5 60 =0.05 IM(A) T 50 IM 40 30 1.0 0.5 I F(av)(A) =tp/T tp T P=0.5W =tp/T tp 20 10 0.4 0.8 1.2 1.6 2.0 2.4 P=1.5W P=2.5W 0.0 0.0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 3: Non repetitive surge peak forward current versus overload duration. IM(A) IM t =0.5 Fig. 4: Relative variation of thermal impedance junction to lead versus pulse duration. K 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 1 K = Rth(j-c) = 0.2 Zth(j-c) (tp. ) =0.5 Tc=25 oC Tc=70 o C Tc=100 o C 0.1 =0.1 T Singl e puls e 0.0 0.001 t(s) 0.01 0.1 1 10 0.01 0.001 tp(s) =tp/ T tp 0.01 0.1 1 10 Fig. 5: Voltage drop versus forward current (maximum values). VFM(V) Fig. 6: Average current temperature(=0.5). IF(av)(A) versus ambient 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 2.5 2.0 1.5 1.0 0.5 I FM(A) Rth(j-a)=Rth(j-l) Tl=100 oC Rth(j-a)=75 o C/W 1cm2 Cu =0.5 T =tp/T tp Tamb(o C) 0.0 0.1 1 10 20 0.0 0 20 40 60 80 100 120 140 160 3/5 SMBYW02-200 Fig. 7: Capacitance versus reverse voltage applied. Fig. 8: Recovery time versus dIF/dt. Fig. 9: Peak reverse current versus dIF/dt. Fig. 10: Dynamic parameters versus junction temperature. Fig. 11: Thermal resistance junction to ambient versus copper surface under each lead. 100 Printed circuit : epoxy (e=35 m) 90 80 70 60 50 40 30 20 10 Scu(cm 2 ) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Rth(j-a) 4/5 SMBYW02-200 PACKAGE MECHANICAL DATA SMB E1 DIMENSIONS REF. D Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 E A1 C L A2 b A1 A2 b c E E1 D L 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 FOOTPRINT DIMENSIONS (in millimeters) SMB 2.3 1.52 2.75 1.52 Ordering type SMBYW02-200 Marking A20 Package SMB Weight 0.11g Base qty 2500 Delivery mode Tape & reel Band indicates cathode Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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